#Kai Han

Understanding dipole formation at dielectric/dielectric hetero-interface

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Comprehensive investigation of the interfacial charges and dipole in GeO x /Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Identification of interfacial defects in a Ge gate stack based on ozone passivation

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Band alignment of HfO2 on SiO2/Si structure

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Reexamination of band offset transitivity employing oxide heterojunctions

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

A possible origin of core-level shift in SiO2/Si stacks

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3on 4H-SiC

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

On the applicability of Gibbs free energy landscape to the definition and understanding of transient negative capacitance in a ferroelectric capacitor

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2Dielectric Using TaCl5and TEA as Precursors

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfₓZr₁₋ₓO₂/Interlayer/Si (MFIS) Gate Structure

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$/SiO$_{\textit{x}}$/Si (MFIS) Gate Structure During Endurance Fatigue

铁电器件课题组（王晓磊） , 中国科学院微电子研究所

#Kai Han

Understanding dipole formation at dielectric/dielectric hetero-interface

Comprehensive investigation of the interfacial charges and dipole in GeO x /Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing

Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs

Identification of interfacial defects in a Ge gate stack based on ozone passivation

Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

Band alignment of HfO2 on SiO2/Si structure

Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack

Reexamination of band offset transitivity employing oxide heterojunctions

A possible origin of core-level shift in SiO2/Si stacks

Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure

Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3on 4H-SiC

On the applicability of Gibbs free energy landscape to the definition and understanding of transient negative capacitance in a ferroelectric capacitor

Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2Dielectric Using TaCl5and TEA as Precursors

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfₓZr₁₋ₓO₂/Interlayer/Si (MFIS) Gate Structure

Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/SiO<sub>x</sub>/Si (MFIS) gate structure

Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$/SiO$_{\textit{x}}$/Si (MFIS) Gate Structure During Endurance Fatigue