Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs - 单粒子效应研究组 | LabXing

array(2) { ["lab"]=> string(4) "1176" ["publication"]=> string(4) "9771" } Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs - 单粒子效应研究组 | LabXing

单粒子效应研究组

简介

关注

Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs

2017

期刊 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

作者 B. Ye · J. Liu · T.s. Wang · T.q. Liu · K. Maaz · J. Luo · B. Wang · Y.n. Yin · Q.g. Ji · Y.m. Sun · M.d. Hou

下载全文

卷 406
页码 443-448
Elsevier BV
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2017.03.162

LabXing 上可以免费创建课题组网站