Impact of temperature on single event upset measurement by heavy ions in SRAM devices - 单粒子效应研究组 | LabXing

array(2) { ["lab"]=> string(4) "1176" ["publication"]=> string(4) "9763" } Impact of temperature on single event upset measurement by heavy ions in SRAM devices - 单粒子效应研究组 | LabXing

单粒子效应研究组

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Impact of temperature on single event upset measurement by heavy ions in SRAM devices

2014

期刊 Journal of Semiconductors

作者 Tianqi Liu · Chao Geng · Zhangang Zhang · Fazhan Zhao · Song Gu · Teng Tong · Kai Xi · Gang Liu · Zhengsheng Han · Mingdong Hou · Jie Liu

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卷 35
期 8
页码 084008
IOP Publishing
ISSN: 1674-4926
DOI: 10.1088/1674-4926/35/8/084008

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